Method of forming hole in glass substrate by using pulsed laser, and method of producing glass substrate provided with hole

ABSTRACT

Disclosed is a method of forming a hole in a glass substrate by using a pulsed laser, the method including (1) preparing the glass substrate including a first surface and a second surface that face each other; (2) forming a concave portion on the first surface by irradiating, with a first condition, the pulsed laser onto the first surface of the glass substrate through a lens; and (3) forming the hole by irradiating the pulsed laser onto the concave portion with a second condition such that energy density of the pulsed laser is less than or equal to a processing threshold value of the glass substrate.

CROSS-REFERENCE TO RELATED APPLICATION

The present application is a continuation application of U.S. patentapplication Ser. No. 15/276,990, filed Sep. 27, 2016, which is based onand claims the benefit of priority to Japanese Patent Application No.2015-196264, filed on Oct. 1, 2015. The entire contents of theseapplications are incorporated herein by reference.

BACKGROUND OF THE INVENTION 1. Field of the Invention

The present invention relates to a method of forming a hole in a glasssubstrate by using a pulsed laser, and a method of producing a glasssubstrate provided with a hole.

2. Description of the Related Art

A technique has been know, so far, that is for forming one or morethrough holes in a glass substrate by irradiating a laser beam, such asa CO₂ laser, onto a glass substrate. Recently, in order to form a morefiner through hole, it has been studied to perform through holeprocessing by using a pulsed laser, as the laser.

For example, it is described in Non-Patent Document 1 (Journal of theJapan Society for Precision Engineering, Vol. 64, No. 7, 1998, pages1062-1066) that, during processing, a pigment that favorably absorbs alaser beam is applied to a surface of a glass substrate, so that energydensity of a pulsed laser is decreased.

For a case where a pulsed laser is used, for example, a fine hole with adiameter that is approximately less than or equal to 30 μm can be formedin a glass substrate.

However, since peak power of a pulsed laser is greater than peak powerof a laser, such as a continuous wave (CW) laser, a crack and/or adefect tends to occur in the glass substrate during a hole formingprocess and/or after forming a hole. In addition, when energy density ofa pulsed laser is lowered so as to avoid occurrence of such a crackand/or a defect, processing time for forming a hole in the glasssubstrate becomes longer, or a hole may not be formed.

Note that, by the experiment by the inventors, it has been found that acrack and/or a defect may occur, even if the method described inNon-Patent Document 1 is used.

There is a need for a method with which a hole can be formed in apractical time by using a pulsed laser, without significantly generatingcracks and/or defects in a glass substrate.

SUMMARY OF THE INVENTION

According to an aspect of the present invention, there is provided amethod of forming a hole in a glass substrate by using a pulsed laser,the method including

(1) a process of preparing the glass substrate including a first surfaceand a second surface that face each other;

(2) a process of forming a concave portion on the first surface byirradiating, with a first condition, the pulsed laser onto the firstsurface of the glass substrate through a lens, wherein the concaveportion on the first surface has a diameter φ and a depth d, wherein thediameter φ is greater than or equal to a diameter S (φ≥S) of a spot onthe first surface formed by the pulsed laser, the diameter S beingexpressed by a formula (i),

the spot diameter S=(4×λ×f×M ²)/(π×r)  (i),

where λ is a wavelength of the pulsed laser, f is a focal length of thelens, M² is an M-squared value, and r is a diameter of a beam of thepulsed laser entering the lens, and wherein the depth d is greater thanor equal to 0.7 times the diameter φ, and

(3) a process of forming the hole by irradiating the pulsed laser ontothe concave portion with a second condition such that energy density ofthe pulsed laser is less than or equal to a processing threshold valueof the glass substrate.

According to another aspect of the present invention, there is provideda method of producing a glass substrate with a hole, the methodincluding

(1) a process of preparing the glass substrate including a first surfaceand a second surface that face each other;

(2) a process of forming a concave portion on the first surface byirradiating, with a first condition, a pulsed laser onto the firstsurface of the glass substrate through a lens, wherein the concaveportion on the first surface has a diameter φ and a depth d, wherein thediameter φ is greater than or equal to a diameter S (φ≥S) of a spot onthe first surface formed by the pulsed laser, the diameter S beingexpressed by a formula (i),

the spot diameter S=(4×λ×f×M ²)/(π×r)  (i),

where λ is a wavelength of the pulsed laser, f is a focal length of thelens, M² is an M-squared value, and r is a diameter of a beam of thepulsed laser entering the lens, and wherein the depth d is greater thanor equal to 0.7 times the diameter φ, and

(3) a process of forming the hole by irradiating the pulsed laser ontothe concave portion with a second condition such that energy density ofthe pulsed laser is less than or equal to a processing threshold valueof the glass substrate.

According to an embodiment of the present invention, a method can beprovided with which a hole can be formed in a practical time by using apulsed laser, without generating a crack and/or a defect in a glasssubstrate.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a diagram schematically illustrating a cross-section of aglass substrate in a process of a through hole forming method accordingto an embodiment of the present invention;

FIG. 2 is a diagram schematically illustrating a flow of a method offorming a hole in a glass substrate according to the embodiment of thepresent invention;

FIG. 3 is a diagram schematically illustrating a configuration ofequipment that can be used in the through hole forming method accordingto the embodiment of the present invention;

FIG. 4 is a diagram schematically illustrating the configuration of theequipment that can be used in the through hole forming method accordingto the embodiment of the present invention;

FIG. 5 is a diagram schematically illustrating a flow of another holeforming method according to the embodiment of the present invention;

FIG. 6 is a diagram schematically illustrating a configuration ofequipment that can be used in the other hole forming method according tothe embodiment of the present invention;

FIG. 7 is a diagram collectively illustrating cross-sectional states andsurface states of a concave portion that is formed after a firstirradiation step in example 1 through example 6; and

FIG. 8 is a diagram collectively illustrating the cross-sectional statesand the surface states of the concave portion that is formed after thefirst irradiation step in example 10 through example 14.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

According to an embodiment of the present invention, there is provided amethod of forming a hole in a glass substrate by using a pulsed laser,the method including

(1) a process of preparing a glass substrate including a first surfaceand a second surface that face each other;

(2) a process of forming a concave portion on the first surface byirradiating, with a first condition, the pulsed laser onto the firstsurface of the glass substrate through a lens, wherein the concaveportion on the first surface has a diameter φ and a depth d, wherein thediameter φ is greater than or equal to a diameter S (φ≥S) of a spot onthe first surface formed by the pulsed laser, the diameter S beingexpressed by a formula (i),

the spot diameter S=(4×λ×f×M ²)/(π×r)  (i),

where λ is a wavelength of the pulsed laser, f is a focal length of thelens, M² is an M-squared value, and r is a diameter of a beam of thepulsed laser entering the lens, and wherein the depth d is greater thanor equal to 0.7 times the diameter φ, and

(3) a process of forming the hole by irradiating the pulsed laser ontothe concave portion with a second condition such that energy density ofthe pulsed laser is less than or equal to a processing threshold valueof the glass substrate.

In the embodiment of the present invention, during forming the hole inthe glass substrate by using the pulsed laser, the two-step process thatincludes the process (2) and the process (3) is performed. Here, theprocess (2) and the process (3) are also referred to as “firstirradiation step” and “second irradiation step,” respectively.

The irradiation steps are described below.

First, at the first irradiation step, a concave portion is formed on afirst surface of a glass substrate by irradiating, with a firstirradiation condition, a pulsed laser onto the glass substrate through alens.

FIG. 1 schematically illustrates a cross-section of the glass substrate,after completing the first irradiation step.

As illustrated in FIG. 1, the glass substrate 10 includes a firstsurface 12 and a second surface 14. In addition, a concave portion 20 isformed on the first surface 12 of the glass substrate 10. On the firstsurface 12, the concave portion 20 has a diameter φ, and a depth d.

Here, the diameter φ of the concave portion 20 has a size that isgreater than or equal to that of a diameter S of a spot that isexpressed by a formula (1),

the spot diameter S=(4×λ×f×M ²)/(π×r)  (1),

where λ is a wavelength of the pulsed laser, f is a focal length of thelens, M² is an M-squared value, and r is a diameter of a beam of thepulsed laser entering the lens (condition A). Additionally, the depth dof the concave portion 20 is greater than or equal to 0.7 times thediameter φ (condition B). In other words, the first condition of thefirst irradiation step is selected, so that the concave portion 20having the diameter φ and the depth d satisfying the above-describedconditions A and B is formed on the first surface 12 of the glasssubstrate 10.

Note that, though the concave portion 20 is formed in the glasssubstrate 10 at the first irradiation step, a hole having a desireddepth is not yet formed.

Subsequently, in the second irradiation step, the energy density of thepulsed laser is controlled to be less than or equal to a processingthreshold value of the glass substrate 10. Further, the pulsed laserwith such “low energy density” is irradiated toward the concave portion20.

Here, in a normal case, the surface of the glass substrate 10 is hardlyprocessed, if the pulsed laser with the energy density that iscontrolled to be less than or equal to the processing threshold value ofthe glass substrate 10 is irradiated onto the glass substrate 10.

However, in the embodiment of the present invention, during the secondirradiation step, the pulsed laser is irradiated onto the concaveportion 20 having the above-described shape. In this case, due to thereflection on an inner wall of the concave portion 20, the pulsed laseris intensively irradiated onto a tip 22 (cf. FIG. 1) of the concaveportion 20. Consequently, processing proceeds even with the irradiationof the pulsed laser with the energy density that is less than or equalto the processing threshold value, so that the tip 22 of the concaveportion 20 can be extended toward the width direction of the glasssubstrate 10. Further, when the tip 22 of the concave portion 20continues extending, and when the tip 22 of the concave portion 20reaches the second surface 14 of the glass substrate 10, a through holecan be formed in the glass substrate 10.

Note that the above-described mechanism is observed by the inventors atthe present time, and the actual process of forming the hole may bedescribed by another mechanism.

In this manner, in the embodiment of the present invention, a hole isformed in a glass substrate through the first irradiation step and thesecond irradiation step. In this method, unlike a method of forming ahole by continuing irradiation of a pulsed laser with energy densitythat exceeds the processing threshold value onto a glass substrate, apulsed laser with energy density that is less than or equal to theprocessing threshold value can be used in the second irradiationprocess. Consequently, a likelihood can be significantly reduced that acrack and/or a defect occurs in the glass substrate, during forming thehole and/or after forming the hole.

Additionally, in this method, processing of the glass substrate iscontinued at the second irradiation step by using the concave portion 20that is obtained at the first irradiation process. Consequently, asituation can be avoided that a hole with a desired depth is not formedwithin a practical time, which situation occurs in the method of simplycontinuing irradiation of the pulsed laser with the reduced energydensity.

In this manner, in the embodiment of the present invention, a hole canbe formed within a practical time by suppressing, as much as possible,occurrence of a crack and/or a defect in the glass substrate.

(The Concave Portion 20)

As described above, the concave portion 20 that is formed at the firstirradiation step has the diameter φ and the depth d.

The diameter φ of the concave portion 20 is, for example, in a rangefrom 3 μm to 30 μm, and preferably in a range from 11 μm to 21 μm.Further, the depth d of the concave portion 20 is, for example, in arange from 2.1 μm to 120 μm, and preferably in a range from 13 μm to 42μm.

Furthermore, a ratio d/φ between the depth d and the diameter φ ispreferably greater than or equal to 0.7; more preferably greater than orequal to 1.0, particularly preferably greater than or equal to 1.5, andmost preferably greater than or equal to 2.0. The ratio d/φ ispreferably less than or equal to 4.0; more preferably less than or equalto 3.5; and particularly preferably less than or equal to 3.0. Thereason is that, when the concave portion 20 is formed in such a mannerthat the ratio d/φ exceeds 4, a crack and/or a defect tends to begenerated.

(The Pulsed Laser Used in the Embodiment of the Present Invention)

In the embodiment of the present invention, the wavelength A of thepulsed laser to be used may be in a range from 200 nm to 1200 nm. Thewavelength A of the pulsed laser may be 355 nm, for example.

Furthermore, in the embodiment of the present invention, the diameter Sof the spot that is expressed by the above-described formula (1) may bein a range from 2 μm to 25 μm; may be in a range from 5 μm to 22 μm; andmay be in a range from 10 μm to 20 μm.

Next, the method of forming the hole in the glass substrate according tothe embodiment of the present invention is described in more detail byreferring to FIGS. 2-4.

FIG. 2 schematically illustrates a flow of the method of forming thehole in the glass substrate (which is referred to as the “first holeforming method,” hereinafter) according to the embodiment of the presentinvention.

As illustrated in FIG. 2, the first hole forming method includes

(1) a process of preparing a glass substrate including a first surfaceand a second surface that face each other (a glass substrate preparationprocess) (step S110);

(2) a process of forming a concave portion on the first surface byirradiating, with a first condition, a pulsed laser onto the firstsurface of the glass substrate through a lens, where the first conditionis such that energy density of the pulsed laser is selected to exceed aprocessing threshold value of the glass substrate (a concave portionforming process) (step S120); and

(3) a process of forming a hole by irradiating the pulsed laser onto theconcave portion with a second condition such that the energy density ofthe pulsed laser is less than or equal to the processing threshold valueof the glass substrate (a hole forming process) (step S130).

Each process is described below by referring to FIG. 3 and FIG. 4. Notethat FIG. 3 and FIG. 4 schematically illustrate a configuration ofequipment that can be used for implementing the first hole formingmethod.

(Step S110)

First, a glass substrate is prepared, which is to be processed.

The composition of the glass substrate is not particularly limited.

The thickness of the glass substrate is not particularly limited;however, the thickness of the glass substrate may be in a range from0.05 mm to 0.7 mm.

(Step S120)

Subsequently, a pulsed laser is irradiated onto the first surface of theglass substrate with the first condition. As a result, a concave portionis formed on the first surface of the glass substrate. Note that stepS120 corresponds to the above-described first irradiation step.Accordingly, in the following description, step S120 is also referred toas the first irradiation step.

FIG. 3 schematically illustrates a configuration of the equipment thatcan be used for step S120, i.e., for the first irradiation step.

As illustrated in FIG. 3, the equipment 100 includes a functiongenerator 120; a laser oscillator 130; and a lens 140.

The function generator 120 has a function to output a predeterminedrectangular wave signal OP, in response to an input gate signal Im.

The laser oscillator 130 has a function to emit a pulsed laser beam PL,based on the rectangular wave signal OP output from the functiongenerator 120.

The pulsed laser beam PL (which is also referred to as the pulsed laserbeam 135) emitted from the laser oscillator 130 is irradiated onto thelens 140. The lens 140 has a function to condense a pulsed laser beam145 onto the first surface 12 of the glass substrate 10, which is to beprocessed.

For forming the concave portion 20 in the glass substrate 10 by usingthe equipment 100, first, the glass substrate 10 is set in the equipment100. The glass substrate 10 is located at a side opposite to the laseroscillator 130 with respect to the lens 140. The glass substrate 10 maybe placed, for example, on a holder (not depicted) including an XYstage. The glass substrate 10 is arranged, so that the pulsed laser isirradiated onto the first surface 12.

Subsequently, as the above-described first irradiation step, the gatesignal Im is input to the function generator 120. In response to theinput gate signal Im, the function generator 120 outputs a predeterminedrectangular wave signal OP.

In the example of FIG. 3, the gate signal Im is input to the functiongenerator 120; and the function generator 120 outputs rectangular wavesOP₁ through OP₃, each having a voltage V₁, for example. Each of therectangular waves OP₁ through OP₃ has duration t_(e1); and an intervalbetween adjacent rectangular waves is t_(p1). However, for a rectangularwave signal OP, a number of rectangular waves, a voltage V₁ of eachrectangular wave, duration t_(o), and an interval t_(p) between adjacentrectangular waves can be adjusted to be predetermined values.

Subsequently, the rectangular wave signal OP output from the functiongenerator 120 is input to the laser oscillator 130. The laser oscillator130 emits a pulsed laser beam PL based on the input rectangular wavesignal OP.

For example, in the example of FIG. 3, the laser oscillator 130 emits apulsed laser beam PL including three pulse waves PL₁ through PL₃ basedon the input rectangular wave signal OP. Each of the pulse waves PL₁through PL₃ has pulse energy E_(p) and duration τ_(c1); and an intervalbetween adjacent pulse waves is τ_(p1). Here, a unit of the pulse energyEp, i.e., a unit of measure of the vertical axis E is “J.”

Here, for the pulsed laser beam PL, a number of pulse waves, pulseenergy E_(P) of each pulse wave, duration τ_(c), and an interval τ_(p)between adjacent pulse waves can be adjusted to be predetermined values.

Subsequently, the pulsed laser beam PL (which is also referred to as thepulsed laser beam 135) emitted from the laser oscillator 130 isirradiated onto the lens 140. The pulsed laser beam 135 irradiated ontothe lens 140 is condensed by the lens 140 to form a pulsed laser beam PF(which is also referred to as the pulsed laser beam 145); and the pulsedlaser beam PF is irradiated onto the glass substrate 10. Consequently, aspot 149 is formed on the first surface 12 of the glass substrate 10.

A spot diameter S of the spot 149 is expressed as follows:

the spot diameter S=(4×λ×f×M ²)/(π×r)  (1)

Here, λ is a wavelength of the pulsed laser beam 135, f is a focallength of the lens 140, M² is an M-squared value, and r is a diameter ofthe pulsed laser beam 135 that enters the lens 140 (cf. FIG. 3).

The energy density E_(m) of the laser is calculated by dividing thepulse energy E_(p) of the pulsed laser beam output from the laseroscillator 130 by the area represented by the spot diameter S. Namely,the energy density Em of the laser is expressed as follows:

the energy density E _(m) =E _(p)/(π×(S/2)²)

Here, the unit of the energy density E_(m), i.e., the unit of measure ofthe vertical axis E′ that represents the waveform of the pulsed laserbeam PF in FIG. 3 is J/mm².

The energy density E_(m) is selected to exceed the processing thresholdvalue E_(t) of the glass substrate 10. For example, suppose that each ofthe pulse waves PL₁ through PL₃ included in the pulsed laser beam PL haspulse energy E_(p) that is greater than or equal to 100 μJ. In thiscase, by setting the focal length to be 50 mm and the diameter r of thepulsed laser beam to be 2.5 mm, the energy density E_(m) exceeds theprocessing threshold value E_(t) of the glass substrate 10.

By irradiation of the pulsed laser beam 145, the concave portion 20 isformed on the first surface 12 of the glass substrate 10.

As described above, an irradiation condition of the pulsed laser beam145 is selected such that

(A) the diameter φ of the concave portion 20 is greater than or equal tothe spot diameter S represented by the formula (1); and(B) the depth d of the concave portion 20 is greater than or equal to0.7 times the diameter p.

A number of times of irradiating the pulsed laser beam 145 (which isreferred to as the “number of shots,” hereinafter) in the firstirradiation step is preferably from 1 time to 300 times; preferably from5 times to 100 times; and more preferably from 11 times to 50 times.

(Step S130)

Subsequently, the pulsed laser beam is irradiated onto the concaveportion 20 of the glass substrate 10 with a second condition. By doingthis, a hole with a desired depth is formed in the first surface 12 ofthe glass substrate 10. Here, step S130 corresponds to theabove-described second irradiation step. Accordingly, in the followingdescription, step S130 is also referred to as the second irradiationstep.

FIG. 4 schematically illustrates step S130, namely, the situation of thesecond irradiation step. As illustrated in FIG. 4, in the secondirradiation step, the rectangular wave signal OP to be output from thefunction generator 120 is changed from that of the first irradiationstep. Consequently, the waveform of the pulsed laser beam PL (the pulsedlaser beam 135) emitted from the laser oscillator 130 is changed fromthat of the first irradiation step.

The method of switching the waveform of the pulsed laser beam PL fromthe first irradiation step to the second irradiation step is notparticularly limited. For example, the waveform of the pulsed laser beamPL may be switched by a PWM control method, an output modulation method,or a frequency modulation method.

As an example, a method of switching the waveform of the pulsed laserbeam PL by the PWM control method is described below.

In this case, as illustrate in FIG. 4, the rectangular wave signal OPoutput from the function generator 120 is changed, so that therectangular wave signal OP includes the rectangular waves OQ₁ throughOQ₃, each having the voltage V₁. Each of the rectangular waves OQ₁through OQ₃ has duration t_(c2); and an interval between adjacentrectangular waves is t_(p2).

Here, when the rectangular wave signal OP at the first irradiation stepillustrated in FIG. 3 and the rectangular wave signal OP at the secondirradiation step illustrated in FIG. 4 are compared, the followinginequalities may be satisfied: for the duration t_(c2)<t_(c1); and forthe interval between adjacent rectangular waves t_(p2)>t_(p1).

Subsequently, the rectangular wave signal OP output from the functiongenerator 120 is input to the laser oscillator 130. By doing this, apulsed laser beam PL whose output is modulated is emitted from the laseroscillator 130.

More specifically, as illustrated in FIG. 4, the pulsed laser beam PLincludes three pulsed waves PQ₁ through PQ₃. Each of the pulsed wavesPQ₁ through PQ₃ has the pulse energy E_(c) and the duration τ_(c2); andan interval between adjacent pulse waves is τ_(p2).

Here, the pulse energy E_(c) is selected, so that the energy densityE_(s) of each of the pulse waves PG₁ through PG₃ of the pulsed laserbeam PF, which is condensed by the lens 140, is less than or equal tothe processing threshold value E_(t) of the glass substrate 10. Theenergy density E_(s) may be, for example, in a range from (1/10) timesthe processing threshold value E_(t) to (1/2) times the processingthreshold value E_(t).

In this manner, the pulsed laser beam PL, i.e., the pulsed laser beam135 is condensed by the lens 140 to form the pulsed laser beam 145; andthe pulsed laser beam 145 is irradiated onto the concave portion 20 ofthe glass substrate 10.

As described above, in the second irradiation step, processing of theglass substrate 10 can be proceeded with, even if the energy densityE_(s) of each of the pulse waves PG₁ through PG₃ is less than or equalto the processing threshold value E_(t) of the glass substrate 10. Thus,after irradiating the pulsed laser beam 145 a number of timescorresponding to a certain number of shots, the hole 160 having thedesired depth is formed in the glass substrate 10. FIG. 4 illustrates anexample in which the through hole 160 is formed.

The number of shots of the pulsed laser beam 145 in the secondirradiation step may be adjusted to be a number of times with which thetip 22 of the concave portion 20 reaches a predetermined depth. Apreferred number of shots differs depending on the desired depth of thehole and the thickness of the glass substrate 10. For example, thenumber of shots is preferably from 1 time to 3000 times, and morepreferably from 1 time to 1500 times.

By the above-described processes, a hole with a desired depth can beformed in the glass substrate 10.

In the first hole forming method, a hole can be formed within apractical time, and an occurrence of a crack and/or a defect can besignificantly suppressed.

Additionally, after forming the hole, an annealing process can beapplied to the glass substrate 10; and after that, by applying anetching process, a diameter of the hole can be enlarged, an inner partof the hole can be smoothed, and debris on the surface of the glasssubstrate 10 can be removed.

Next, another method of forming a hole in a glass substrate according toan embodiment of the present invention is described in more detail byreferring to FIG. 5 and FIG. 6.

FIG. 5 schematically illustrates a flow of the other method of formingthe hole in the glass substrate (which is referred to as the second holeforming method, hereinafter) according to the embodiment of the presentinvention.

As illustrated in FIG. 5, the second hole forming method includes

(1) a process of preparing a glass substrate including a first surfaceand a second surface that face each other (a glass substrate preparationprocess) (step S210);

(2) a process of applying an absorber layer on the first surface of theglass substrate (an absorber layer application process) (step S220);

(3) a process of forming a concave portion on the first surface byirradiating, with a first condition, a pulsed laser onto the firstsurface of the glass substrate through a lens, where the first conditionis selected, so that the energy density of the pulsed laser is less thanor equal to the processing threshold value of the glass substrate (aconcave portion forming process) (step S230); and

(4) a process of forming a hole by irradiating, with a second condition,the pulsed laser onto the concave portion, where the second condition issuch that the energy density of the pulsed laser is less than or equalto the processing threshold value of the glass substrate (a hole formingprocess) (step S240).

These processes are described below.

(Step S210)

First, a glass substrate is prepared, which is to be processed. Sincethe process is the same as the step S110 of the above-described firsthole forming method, the process is not described further here.

(Step S220)

Subsequently, an absorber layer applies on the first surface of theglass substrate.

The material of the absorber layer is not particularly limited, as longas the material has a function to absorb at least a part of the energyof the pulsed laser to be used at step S230. The absorber layer may be apigment including synthetic resin ink and/or carbon black, for example.

The absorber layer applies on the first surface of the glass substrate,for example, by a spray coating method or an inkjet method.

(Step S230)

Subsequently, the pulsed laser is irradiated onto the first surface ofthe glass substrate with the first condition. As a result, a concaveportion is formed on the first surface of the glass substrate. Note thatstep S230 corresponds to the above-described first irradiation step.Accordingly, in the following description, step S230 is also referred toas the first irradiation step.

FIG. 6 schematically illustrates step S230, i.e., a situation in thefirst irradiation step. Note that, in FIG. 6, the absorber layer is notdepicted for clarity.

As illustrated in FIG. 6, this first irradiation step is almost the sameas the first irradiation step in the first hole forming method, such asthat of illustrated in FIG. 3.

For example; in the example of FIG. 6, the gate signal Im is input tothe function generator 120; and the function generator 120 outputsrectangular waves OR₁ through OR₃, each having the voltage V₁. Each ofthe rectangular waves OR₁ through OR₃ has duration t_(c3); and aninterval between adjacent rectangular waves is t_(p3). Further, in theexample of FIG. 6, the laser oscillator 130 emits a pulsed laser beam PLincluding three pulse waves PM₁ through PM₃ base on the inputrectangular wave signal OP. Each of the pulse waves PM₁ through PM₃ haspulse energy E₁ and duration τ_(c3); and an interval between adjacentpulses is τ_(p3). Here, unit of the pulse energy E₁, namely, the unit ofmeasure of the vertical axis E is J.

However, in step S230, the energy density E_(n) of each of pulse wavesPH₁ through PH₃ included in the pulsed laser beam 145 to be irradiatedonto the glass substrate 10 is selected, so that the energy densityE_(n) is less than or equal to the processing threshold value E_(t) ofthe glass substrate 10.

The reason for setting the energy density E_(n) to be less than or equalto the processing threshold value E_(t) is that, in the second holeforming method, by the existence of the absorber layer, the concaveportion 20 having the above described features can be formed, even ifthe energy density E_(n) of the pulsed laser beam 145 is less than orequal to the processing threshold value E_(t) of the glass substrate 10.

Namely, in the second hole forming method, the absorber layer (notdepicted in FIG. 6) applies on the first surface 12 of the glasssubstrate 10 at step S220. When such an absorber layer exists on thefirst surface 12 of the glass substrate 10, the first surface 12 of theglass substrate 10 can be relatively easily ablated by absorption of thepulsed laser beam 145 by the absorber layer, even if the energy densityon the first surface 12 of the glass substrate 10 is low. Then, theconcave portion 20 having the above-described features, i.e., theconcave portion 20 satisfying the conditions (A) and (B) is formed.

The number of shots of the pulsed laser beam in the first irradiationstep of the second hole forming method is preferably from 1 time to 300times; and more preferably from 21 times to 50 times, for example.

(Step S240)

Subsequently, the pulsed laser is irradiated, with the second condition,onto the concave portion 20 of the glass substrate 10. As a result, thehole with the desired depth is formed in the glass substrate 10. Here,step S240 corresponds to the above-described second irradiation step.Accordingly, in the following description, step S240 is also referred toas the second irradiation step.

Step S240 is almost the same as step S130 of the above-described firsthole forming method. Namely, in step S240, the laser oscillator 130irradiates a pulsed laser beam PL including pulse waves PN₁ through PN₃onto the lens 140. Further, pulse waves PK₁ through PK₃ condensed by thelens 140 are irradiated onto the concave portion 20 of the glasssubstrate 10.

Each of the pulse waves PN₁ through PN₃ included in the pulsed laserbeam PL has energy E_(g). In other words, each of the pulse waves PK₁through PK₃ included in the pulsed laser beam PF has energy densityE_(k). The energy density E_(k) is selected, so that the energy densityE_(k) is less than or equal to the processing threshold value E_(t) ofthe glass substrate 10 (which means the processing threshold value for acase where there is no absorber layer, and the same for the following).The energy density E_(k) may be in a range from (1/10) times theprocessing threshold value E_(t) of the glass substrate to (1/2) timesthe processing threshold value E_(t) of the glass substrate, forexample.

As described above, in the second irradiation step, due to the existenceof the concave portion 20, processing of the hole of the glass substrate10 can be proceeded with, even if the energy density E_(k) of each ofthe pulse waves PK₁ through PK₃ is less than or equal to the processingthreshold value E_(t) of the glass substrate 10.

Note that, in the second hole forming method, the magnitude relationshipbetween step S240, i.e., the energy density E_(k) of the pulse wave PK₁through PK₃ in the second irradiation step and step S230, i.e., theenergy density E_(n) of the pulse waves PH₁ through PH₃ in the firstirradiation step is not particularly limited.

Namely, the energy density E_(n) and the energy density E_(k) may be asfollows: E_(n)>E_(k), E_(n)=E_(k), or E_(n)<E_(k).

It is apparent that, with the second hole forming method, the effectthat is the same as that of the first hole forming method can beobtained, namely, the effect can be obtained such that the hole can beformed within a practical time, and an occurrence of cracks and/ordefects can be significantly suppressed.

Additionally, after forming the hole, an annealing process can beapplied to the glass substrate 10; and after that, by applying anetching process, a diameter of the hole can be enlarged, an inner partof the hole can be smoothed, and debris on the surface of the glasssubstrate 10 can be removed.

The specific examples of the method of forming the hole according to theembodiment of the present invention are described above by the firsthole forming method and the second hole forming method, as the examples.However, the method of forming the hole according to the presentinvention is not limited to these.

For example, in the above description, at the time of transition fromthe first irradiation step to the second irradiation step, the waveformof the pulsed laser beam PL is changed by the PWM control method.However, instead of the PWM control method, a frequency modulationmethod may be used. Specifically, by changing the interval between thepulses t_(p1) in FIG. 3 and the interval between the pulses t_(p2) inFIG. 4, namely, by changing the time intervals, the waveforms of thepulsed laser beam PL can be changed. As a consequence, the intervalsτ_(p1) and τ_(p2) between the pulses output from the laser oscillator130 are similarly changed, and a pulse train with different timeintervals can be emitted, namely, processing by the frequency modulationcan be achieved.

In addition, various modifications can be made.

In the above-description, the methods according to the embodiment of thepresent invention are described, which are for forming the hole in theglass substrate by using the pulsed laser. However, it is apparent thatthese methods can be applied to a method of producing a glass substrateprovided with a hole according to another embodiment of the presentinvention.

EXAMPLES

Next, examples of the present invention are described.

Example 1

By the following method, a through hole was formed in a glass substrateby using a pulsed laser.

First, a glass substrate (alkali-free glass) with thickness of 0.2 mmwas prepared.

Subsequently, the glass substrate was set in the equipment 100, such asthat of illustrated in above-described FIG. 3. In the equipment 100, theequipment WW1281A (produced by TOYO Corporation) was used as thefunction generator 120, and the equipment AVIA-X (produced by Coherent,Inc.) was used as the laser oscillator 130. As the lens 140 (the opticalsystem) a plano-convex lens formed of synthetic quartz was used, whichhad a focal length of 50 mm.

Next, the first step and the second step of the above-described firsthole forming method were implemented. The wavelength λ of the pulsedlaser emitted from the laser oscillator 130 was 355 nm, and a pulsewidth was 20 ns. The repetition frequency was 10 kHz. Further, thediameter r of the pulsed laser beam at the time of entering the lens 140was 2.5 mm.

Accordingly, the spot diameter S that is expressed by theabove-described formula (1) is 10.8 μm, where M²=1.2.

In the first irradiation step, 50 shots of the pulsed laser with energydensity E_(p) of 1.31 μJ/mm² were irradiated onto the glass substrate.Note that, in this example, the processing threshold value energydensity E_(t) of the glass substrate was 1.09 J/mm². Thus, E_(m)>E_(t)was satisfied.

As a result, the concave portion was formed in the glass substrate.

In the concave portion, the diameter φ was approximately 20.4 μm, andthe depth d was approximately 41.9 μm. Therefore, the ratio d/p wasapproximately 2.05.

Subsequently, for the second irradiation step, the energy density of thepulsed laser beam emitted from the laser oscillator 130 was varied bythe PWM control method.

In the second irradiation step, 460 shots of the pulsed laser withenergy density E_(s) of 0.22 J/mm² were irradiated onto the concaveportion of the glass substrate that was formed in the first irradiationstep. Here, E_(s)<E_(t) was satisfied.

After completing the second irradiation step, the glass substrate wasobserved. As a result, it was confirmed that a through hole was formedin the glass substrate. No abnormality, such as a crack or a defect, wasfound in the glass substrate.

Example 2

By the method that was the same as that of example 1, a through hole wasformed in a glass substrate by using the pulsed laser.

However, in example 2, the number of shots of the pulsed laser in thefirst irradiation step was 30 times. Other conditions were the same asthose of example 1.

In the concave portion that was formed in the first irradiation step,the diameter φ was approximately 18.1 μm, and the depth d wasapproximately 27.5 μm. Therefore, the ratio d/p was approximately 1.51.

After completing the second irradiation step, the glass substrate wasobserved. As a result, it was confirmed that a through hole was formedin the glass substrate. No abnormality, such as a crack or a defect, wasfound in the glass substrate.

Example 3

By the method that was the same as that of example 1, a through hole wasformed in a glass substrate by using the pulsed laser.

However, in example 3, the number of shots of the pulsed laser in thefirst irradiation step was 20 times. Other conditions were the same asthose of example 1.

In the concave portion that was formed in the first irradiation step,the diameter φ was approximately 16.1 μm, and the depth d wasapproximately 17.6 μm. Therefore, the ratio d/φ was approximately 1.09.

After completing the second irradiation step, the glass substrate wasobserved. As a result, it was confirmed that a through hole was formedin the glass substrate. No abnormality, such as a crack or a defect, wasfound in the glass substrate.

Example 4

By the method that was the same as that of example 1, an attempt wasmade to form a through hole by irradiating the pulsed laser onto theglass substrate.

However, in example 4, the number of shots of the pulsed laser in thefirst irradiation step was 10 times. Other conditions were the same asthose of example 1.

In the concave portion that was formed in the first irradiation step,the diameter φ was approximately 15.9 μm, and the depth d wasapproximately 10.7 μm. Therefore, the ratio d/φ was approximately 0.67.

After completing the second irradiation step, the glass substrate wasobserved. As a result, it was found that processing was not proceededwith from the concave portion that was formed in the first irradiationstep, and that no through hole was formed in the glass substrate.

Example 5

By the method that was the same as that of example 1, an attempt wasmade to form a through hole by irradiating the pulsed laser onto theglass substrate.

However, in example 5, the number of shots of the pulsed laser in thefirst irradiation step was 5 times. Other conditions were the same asthose of example 1.

In the concave portion that was formed in the first irradiation step,the diameter φ was approximately 14.5 μm, and the depth d wasapproximately 3.6 μm. Therefore, the ratio d/φ was approximately 0.24.

After completing the second irradiation step, the glass substrate wasobserved. As a result, it was found that processing was not proceededwith from the concave portion that was formed in the first irradiationstep, and that no through hole was formed in the glass substrate.

Example 6

By the method that was the same as that of example 1, an attempt wasmade to form a through hole by irradiating the pulsed laser onto theglass substrate.

However, in example 6, the number of shots of the pulsed laser in thefirst irradiation step was 3 times. Other conditions were the same asthose of example 1.

In the concave portion that was formed in the first irradiation step,the diameter φ was approximately 12.7 μm, and the depth d wasapproximately 2.9 μm. Therefore, the ratio d/φ was approximately 0.23.

After completing the second irradiation step, the glass substrate wasobserved. As a result, it was found that processing was not proceededwith from the concave portion that was formed in the first irradiationstep, and that no through hole was formed in the glass substrate.

Example 7

By the method that was the same as that of example 1, a through hole wasformed in a glass substrate by using the pulsed laser.

However, in example 7, the energy density E_(m) of the pulsed laser inthe first irradiation step was 1.31 J/mm², and the number of shots was50 times. Further, the energy density E_(s) of the pulsed laser in thesecond irradiation step was 1.31 J/mm², and the number of shots was 460times.

In the concave portion that was formed in the first irradiation step,the diameter φ was approximately 20.4 μm, and the depth d wasapproximately 41.9 μm. Therefore, the ratio d/φ was approximately 2.05.

After completing the second irradiation step, the glass substrate wasobserved. As a result, it was confirmed that a through hole was formedin the glass substrate. However, it was confirmed that cracks anddefects were formed in the glass substrate.

The following Table 1 collectively shows, for example 1 through example7, the conditions of the first irradiation step and the secondirradiation step; the shape of the concave portion after the firstirradiation step; and the forming status of the through hole and thestate of the glass substrate after the second irradiation step.

TABLE 1 First Second irradiation step irradiation step Through EnergyNumber Concave portion Energy Number hole density of shots Diameter φDepth d Ratio density of shots forming Example (J/mm²) (times) (μm) (μm)d/φ (J/mm²) (times) status State 1 1.31 50 20.4 41.9 2.05 0.22 460 OKFine 2 1.31 30 18.1 27.5 1.51 0.22 460 OK Fine 3 1.31 20 16.1 17.6 1.090.22 460 OK Fine 4 1.31 10 15.9 10.7 0.67 0.22 460 NG — 5 1.31 5 14.53.6 0.24 0.22 460 NG — 6 1.31 3 12.7 2.9 0.23 0.22 460 NG — 7 1.31 5020.4 41.9 2.05 1.31 460 OK Crack/defect

Additionally, FIG. 7 collectively shows, for example 1 through example6, a cross-sectional state and a surface state of the concave portionformed in the glass substrate after the first irradiation step.

Example 10

By the following method, a through hole was formed in a glass substrateby using a pulsed laser.

First, a glass substrate with a thickness of 0.2 mm (alkali-free glass)was prepared. Subsequently, an absorber layer was formed on one surfaceof the glass substrate. The absorber layer was formed of an oil-basedacrylic lacquer (H62-8808 65), and the absorber layer was formed on theglass substrate by spray coating.

Next, by the method that was the same as that of example 1, the firstirradiation step and the second irradiation step of the above-describedsecond hole forming method were implemented. The wavelength λ of thepulsed laser emitted from the laser oscillator 130 was 355 nm, and apulse width was 20 ns. The repetition frequency was 10 kHz. Further, thediameter r of the pulsed laser beam at the time of entering the lens 140was 2.5 mm.

Accordingly, the spot diameter S that is expressed by theabove-described formula (1) is 10.8 μm, where M²=1.2.

In the first irradiation step, 50 shots of the pulsed laser with energydensity E_(n) of 0.22 J/mm² were irradiated onto the glass substrate.Note that, in this example, the processing threshold value energydensity E_(t) of the glass substrate was 1.09 J/mm². Thus, E_(n)<E_(t)was satisfied.

As a result, the concave portion was formed in the glass substrate.

In the concave portion, the diameter c was approximately 12.1 μm, andthe depth d was approximately 28.7 μm. Therefore, the ratio d/φ wasapproximately 2.37.

Subsequently, for the second irradiation step, the energy density of thepulsed laser emitted from the laser oscillator 130 was varied by the PWMcontrol method.

In the second irradiation step, 460 shots of the pulsed laser withenergy density E_(s) of 0.55 J/mm² were irradiated onto the concaveportion of the glass substrate that was formed in the first irradiationstep. Here, E_(k)<E_(t) was satisfied.

After completing the second irradiation step, the glass substrate wasobserved. As a result, it was confirmed that a through hole was formedin the glass substrate. No abnormality, such as a crack or a defect, wasfound in the glass substrate.

Example 11

By the method that was the same as that of example 10, a through holewas formed in a glass substrate by using the pulsed laser.

However, in example 11, the number of shots of the pulsed laser in thefirst irradiation step was 30 times. Other conditions were the same asthose of example 10.

In the concave portion that was formed in the first irradiation step,the diameter φ was approximately 11.5 μm, and the depth d wasapproximately 13.0 μm. Therefore, the ratio d/φ was approximately 1.13.

After completing the second irradiation step, the glass substrate wasobserved. As a result, it was confirmed that a through hole was formedin the glass substrate. No abnormality, such as a crack or a defect, wasfound in the glass substrate.

Example 12

By the method that was the same as that of example 10, a through holewas formed in a glass substrate by using the pulsed laser.

However, in example 12, the number of shots of the pulsed laser in thefirst irradiation step was 20 times. Other conditions were the same asthose of example 10.

In the concave portion that was formed in the first irradiation step,the diameter φ was approximately 10.9 μm, and the depth d wasapproximately 7.1 μm. Therefore, the ratio d/φ was approximately 0.65.

After completing the second irradiation step, the glass substrate wasobserved. As a result, it was confirmed that a through hole was formedin the glass substrate. However, it was confirmed that cracks anddefects were generated in the glass substrate.

Example 13

By the method that was the same as that of example 10, a through holewas formed in a glass substrate by using the pulsed laser.

However, in example 13, the number of shots of the pulsed laser in thefirst irradiation step was 10 times. Other conditions were the same asthose of example 10.

In the concave portion that was formed in the first irradiation step,the diameter φ was approximately 9.2 μm, and the depth d wasapproximately 3.3 μm. Therefore, the ratio d/φ was approximately 0.35.

After completing the second irradiation step, the glass substrate wasobserved. As a result, it was confirmed that a through hole was formedin the glass substrate. However, it was confirmed that cracks anddefects were generated in the glass substrate.

Example 14

By the method that was the same as that of example 10, a through holewas formed in a glass substrate by using the pulsed laser.

However, in example 14, the number of shots of the pulsed laser in thefirst irradiation step was 5 times. Other conditions were the same asthose of example 10.

In the concave portion that was formed in the first irradiation step,the diameter φ was approximately 6.6 μm, and the depth d wasapproximately 1.3 μm. Therefore, the ratio d/φ was approximately 0.19.

After completing the second irradiation step, the glass substrate wasobserved. As a result, it was confirmed that a through hole was formedin the glass substrate. However, it was confirmed that cracks anddefects were generated in the glass substrate.

Example 15

By the method that was the same as that of example 10, a through holewas formed in a glass substrate by using the pulsed laser.

However, in example 15, the number of shots in the first irradiationstep was 50 times.

Further, the energy density of the pulsed laser in the secondirradiation step was 1.31 J/mm², and the number of shots was 460 times.Other conditions were the same as those of example 10.

In the concave portion that was formed in the first irradiation step,the diameter (p was approximately 12.1 μm, and the depth d wasapproximately 28.7 μm. Therefore, the ratio d/φ was approximately 2.37.

After completing the second irradiation step, the glass substrate wasobserved. As a result, it was confirmed that a through hole was formedin the glass substrate. However, it was confirmed that cracks anddefects were generated in the glass substrate.

The following Table 2 collectively shows, for example 10 through example15, the conditions of the first irradiation step and the secondirradiation step; the shape of the concave portion after the firstirradiation step; and the forming status of the through hole and thestate of the glass substrate after the second irradiation step.

TABLE 2 First Second irradiation step irradiation step Through EnergyNumber Concave portion Energy Number hole density of shots Diameter φDepth d Ratio density of shots forming Example (J/mm²) (times) (μm) (μm)d/φ (J/mm²) (times) status State 10 0.22 50 12.1 28.7 2.37 0.55 460 OKFine 11 0.22 30 11.5 13.0 1.13 0.55 460 OK Fine 12 0.22 20 10.9 7.1 0.650.55 460 OK Crack/defect 13 0.22 10 9.2 3.3 0.35 0.55 460 OKCrack/defect 14 0.22 5 6.6 1.3 0.19 0.55 460 OK Crack/defect 15 0.22 5012.1 28.7 2.37 1.31 460 OK Crack/defect

Additionally, FIG. 8 collectively shows, for example 10 through example14, a cross-sectional state and a surface state of the concave portionformed in the glass substrate after the first irradiation step.

In this manner, it is confirmed that, by implementing the firstirradiation step and the second irradiation step by the pulsed laserunder a properly defined condition, a through hole can be formed in astate where an occurrence of a crack and a defect in the glass substrateis significantly suppressed.

The method of forming a hole in a glass substrate by using a pulsedlaser, and the method of producing a glass substrate provided with ahole are described by the embodiments. However, the method of forming ahole in a glass substrate by using a pulsed laser, and the method ofproducing a glass substrate provided with a hole according to thepresent invention are not limited to the above-described embodiments,and various modifications and improvements may be made within the scopeof the present invention.

What is claimed is:
 1. A method of producing a glass substrate with ahole, the method comprising: preparing the glass substrate including afirst surface and a second surface that face each other; forming anabsorber layer on the first surface of the glass substrate; forming aconcave portion on the first surface by irradiating, with a firstcondition, a pulsed laser onto the first surface of the glass substratethrough a lens, wherein the first condition is such that the energydensity of the pulsed laser is selected to be less than or equal to theprocessing threshold value of the glass substrate, wherein the concaveportion on the first surface has a diameter φ and a depth d, wherein thediameter φ is greater than or equal to a diameter S (φ≥S) of a spot onthe first surface formed by the pulsed laser, the diameter S beingexpressed by a formula (i),the spot diameter S=(4×λ×f×M ²)/(π×r)   (i), where λ is a wavelength ofthe pulsed laser, f is a focal length of the lens, M² is an M-squaredvalue, and r is a diameter of a beam of the pulsed laser entering thelens, and wherein the depth d is greater than or equal to 0.7 times thediameter φ; and forming the hole by irradiating the pulsed laser ontothe concave portion with a second condition such that energy density ofthe pulsed laser is less than or equal to a processing threshold valueof the glass substrate, wherein the energy density of the pulsed laserin the second condition differs from the energy density of the pulsedlaser in the first condition.
 2. The method according to claim 1,wherein the energy density of the pulsed laser in the second conditionis greater than the energy density of the pulsed laser in the firstcondition.
 3. The method according to claim 1, wherein a pulse train ofthe pulsed laser in the second condition is modulated.
 4. The methodaccording to claim 1, wherein the wavelength λ of the pulsed laser isless than or equal to 1200 nm.
 5. The method according to claim 1,wherein the diameter φ is in a range from 3 μm to 30 μm.
 6. The methodaccording to claim 1, wherein the depth d is in a range from 2.1 μm to120 μm.
 7. The method according to claim 1, wherein the diameter S ofthe spot is less than or equal to 15 μm.